近日，法国格勒诺布尔大学的Olivier Boulle及其研究团队取得一项新进展。经过不懈努力，他们对合成反铁磁体中快速电流感应的斯格明子运动进行了研究
该研究团队展示了补偿合成反铁磁体中的斯格明子，可以沿着电流方向以高达每秒900米的速度移动。这一成就得益于净拓扑电荷的抵消，有效消除了斯格明子霍尔效应的干扰。这项研究成果为基于轨迹中斯格明子的快速操控技术奠定了重要基础，为逻辑和存储器件的创新发展开辟了新的道路。
据悉，磁斯格明子是一种拓扑磁性结构，因其能在存储器和逻辑器件中充当纳米级信息比特而备受瞩目。尽管室温下的铁磁斯格明子及其电流感应操纵已被证实，但其速度却受限于每秒约100米的范围。此外，它们的动力学常受到斯格明子霍尔效应的干扰，这是一种源于斯格明子拓扑电荷的横向运动。
附：英文原文
Title: Fast current-induced skyrmion motion in synthetic antiferromagnets
Author: Van Tuong Pham, Naveen Sisodia, Ilaria Di Manici, Joseba Urrestarazu-Larraaga, Kaushik Bairagi, Johan Pelloux-Prayer, Rodrigo Guedas, Liliana D. Buda-Prejbeanu, Stéphane Auffret, Andrea Locatelli, Tevfik Onur Mente, Stefania Pizzini, Pawan Kumar, Aurore Finco, Vincent Jacques, Gilles Gaudin, Olivier Boulle
Issue&Volume: 2024-04-19
Abstract: Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.
Source: https://www.science.org/doi/10.1126/science.add5751